SKU:30237909226
Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 0.1-1.1 ohm-cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 0.1-1.1 ohm-cmGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Ga doped Conductor type: P type Resistivity: 0. 1 1. 1 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:
3) is included to set various working modes for measuring the capacity and lifecycle of all types of rechargeable batteries
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Limit: 70 centigrade
Such a device is 1000 grade cleanroom compatible and it will satisfy the most demanding battery assembling environment
Polished surface: One side epi polished by special CMP technology
Polyamide (JIS Z1714): 0
Total Length: 230 mm
Parameters: Milling time
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