SKU:38805778780
Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 2SP Resistivity : 0.1-0.5 ohm-cm - GEGae50D05C2R01US
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 2SP Resistivity : 0.1-0.5 ohm-cm - GEGae50D05C2R01USGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: Two sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Ga doped Conductor type: P type Resistivity: 0. 1 0. 5 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:
This series provides a safe and convenient packing and delivery solution for bare die
Resistivity : (6
Nc>2x10^18 /cc
Thermal conductivity
The CIP or WIP die with electrode terminals that can be connected to a special battery analyzer for electrochemical testing
006 cal/cm/ oK
please review the cleaning instruction for the spin coaters
660 V~50KA Current 50 A Dimension 43 x 43 mm
Ultrasonics Cleaner
Brand new laptop ( 4GB RAM 128GB SSD Hard drive) with MS Window 10 is included and the latest version testing software is installed and calibrated for immediate use
This aluminum laminated film (115 um ) is used as a casing material for the polymer Li-Ion battery
ITV Series
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