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SKU:29682924368
Ge Wafer (100)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Wafer (100)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cmGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:
Reference article: DIELECTRIC PROPERTIES AND ELECTRICAL CONDUCTIVITY STUDIES ON Gd3Ga5O12 SINGLE CRYSTALS
GaN layer thickness 30 microns
porous 3D graphene foam structure
Size: 10x10x 0
005 wt% Growth Method
superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties
Purchase Notes: Please make sure the specification of the tube meets your need before making a purchase
Crystal: BaF2 Crystal
Conductive type: P type/ Boron doped
General Size: irregular shape
The Role of Isostatic Pressing in Large-Scale Production of Solid-State Batteries
MSK-PN110D-S is a compact crimper with the disassembling die set
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