SKU:5658762752

GaSb (100), N Type, Te doped, 2"D x0.5mm wafer 1sp Carrier Concentration: (1-8)x10^17 cm^-3

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Regular price $430.68 USD
Regular price $467.68 USD Sale price $430.68 USD
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

GaSb (100), N Type, Te doped, 2"D x0.5mm wafer 1sp Carrier Concentration: (1-8)x10^17 cm^-3High quality GaSb single crystal wafers for semiconductor industries. Size: 2" diameter x 0. 5mm, Orientation: (100) Flats: SEMI Dopping: Te doped, Conducting type: N type. Mobility: 2000 3500 cm^2 V. s Carrier Concentration: (1 8)x10^17 cm^ 3 Polish: one side polished. Grown by a special LEC technique , EPD :<1000 cm2 We also provide high resistivity N and P type GaSb wafers. Surface finish (Ra) : < 5A Typical Properties Crystal Structure: cubic a =

D 2-1/8"+/- 0

Purity:            99 %

please order separately

C type thermocouple extension wire

the active material portion is 95%

Areal Density: 41+/- 2 g/m^2

60 psi recommended

5 um +/- 3%

MTI supplies high quality hot pressed SiC cutting blades with 8" diameter x 0

Doping:                          Zn doped

Size:             5x5x0

Gauge Displayed Pressure Value (Mpa)

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Exchange/Return Notes
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