SKU:81838902033
GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp - GAZne76D05C2US5
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp - GAZne76D05C2US5GaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 3" dia x 0. 5mm Polishing: Two sides polished Doping: Zn doped Conductor type: P type Carrier Concentration: (1. 3 1. 4)E19 cm^3 Mobility: 71 74 cm^2 V. S Ra(Average Roughness) : < 0. 4 nm Resistivity : (6. 1 6. 6)x10^ 3ohm. cm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
2mm) x 0
Surface roughness: Ra<10A
L=L1+L2:=160+110=270mm
100 % sintered
1600°C ( in air) continuous
Electrical and Gas Feedthrough for MSK-170 EQ-FH-170
Back surface finish: as received
Material made: PP (Polypropylene)
12)E-2 ohm
Tensile Strength 290 N
Reads to 0
ball milling
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