SKU:65346504921

GaP wafer, S doped, (111) orientation, 2" dia x 0.5mm, 1sp - GPSc50D05C1

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Regular price $332.93 USD
Regular price $370.93 USD Sale price $332.93 USD
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

GaP wafer, S doped, (111) orientation, 2" dia x 0.5mm, 1sp - GPSc50D05C1GaP single crystal wafer, Size: 2" diameter(+ _0. 15mm) x 0. 5mm(+ _ 0. 05mm), Doping: S doped, Conducting type: N type, Orientation: (111)+_30' Edge Orientation: (110)1 Polished: One side polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 ? FONT> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or

high impact absorption

Material  Alumina chamber with heating coils embedded Dimension    Click the picture for more details

Please contact us with any concerns

Color varies (black

Anode:    Anode Powder+Conductive Graphite+PVDF+NMP (or SBR+CMC)

Polishing:                              two  sides  polished

For vacuum sealing

Click here to see JCPDS data of DyScO3 (X-ray diffraction index data from powder XRD

Time interval: 1 - 900s Max

Digital Communications: RS485

1200W  ( 15A air breaker required )

:  415mm / 16

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Exchange/Return Notes
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  • Final sale items are not eligible for returns or exchanges.
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