SKU:65346504921
GaP wafer, S doped, (111) orientation, 2" dia x 0.5mm, 1sp - GPSc50D05C1
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaP wafer, S doped, (111) orientation, 2" dia x 0.5mm, 1sp - GPSc50D05C1GaP single crystal wafer, Size: 2" diameter(+ _0. 15mm) x 0. 5mm(+ _ 0. 05mm), Doping: S doped, Conducting type: N type, Orientation: (111)+_30' Edge Orientation: (110)1 Polished: One side polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 ? FONT> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or
high impact absorption
Material Alumina chamber with heating coils embedded Dimension Click the picture for more details
Please contact us with any concerns
Color varies (black
Anode: Anode Powder+Conductive Graphite+PVDF+NMP (or SBR+CMC)
Polishing: two sides polished
For vacuum sealing
Click here to see JCPDS data of DyScO3 (X-ray diffraction index data from powder XRD
Time interval: 1 - 900s Max
Digital Communications: RS485
1200W ( 15A air breaker required )
: 415mm / 16
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Exchange/Return Notes
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