GaP Wafer, undoped (100) 10x10x0.5 mm, 2sp - GPUa101005S2

GaP Wafer, undoped (100) 10x10x0.5 mm, 2sp - GPUa101005S2GaP single crystal wafer, Size: 10mm x 10 mm x 0. 5 mm, Doping: undoped, Conducting type: N type, Orientation: (100) Polished: two sides Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100> or <111> Conducting Type N N Carrier Concentration 2 ~ 8 x1017

Max Load: 600 metric ton (at room temperature)

Program steps

support rod ( 10 mm dia x 62 mm L )

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or 820 MPa equivalent

12 @ 100 oC

Displays total volume dispensed in mL or µL units

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Purity:           99

5" (631 mm) Outside Diameter 0

Lithium Solid State or Li-ion half cell will be assembled

Temper:                                     H19