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SKU:88043925431
Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 1SP,R:>50 ohm.cm
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 1SP,R:>50 ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (110) + 0. 5 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: < 30 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal Structure:
and lower expansion at high temperature
The filter itself is a heavy duty
Net weight:13
Output 0-260V / 0-520V (3/4 Phase+ G) 40-70 Hz The Max Current Per Phase: 125A/62
Wafer Size: 2" dia x 500 microns
IF length: 8
Double Folding could be done manually by the MSK-116A ironing machine
85 for the CMC with viscosity of 3500-5500 cps
Holds small or big syringes up to 200 mL
Range: 10 mV - 5V programmable
One Scraper is included to apply printable material
Atomic Number 79
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Exchange/Return Notes
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