SKU:88043925431

Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 1SP,R:>50 ohm.cm

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Regular price $384.68 USD
Regular price $421.68 USD Sale price $384.68 USD
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 1SP,R:>50 ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (110) + 0. 5 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: < 30 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal Structure:

and lower expansion at high temperature

The filter itself is a heavy duty

Net weight:13

Output 0-260V   /     0-520V   (3/4 Phase+ G) 40-70 Hz The Max Current Per Phase: 125A/62

Wafer Size:                            2" dia x  500 microns

IF length:     8

Double Folding could be done manually by the MSK-116A ironing machine

85 for the CMC with viscosity of 3500-5500 cps

Holds small or big syringes up to 200 mL

Range: 10 mV - 5V programmable

One Scraper is included to apply printable material

Atomic Number      79

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Exchange/Return Notes
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