SKU:11234742015
GaAs Wafer , Growing Method: VGF ,(100) undoped Semi-Insulated 100mm D x0.6 mm, 1SP
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaAs Wafer , Growing Method: VGF ,(100) undoped Semi-Insulated 100mm D x0.6 mm, 1SPGaAs single crystal wafer Growing Method: VGF Orientation: (100) Flat: (01 1) .(011) Size: 100 mm dia x 0. 6mm Polishing: one side polished Ra(Average Roughness) : < 0. 4 nm Doping: undoped Conductor type: Semi Insulating Resistivity: (0. 39 4. 75)E8 Ohm. cm Mobility: 4120 6820 cm^2 v. s. EPD: <5000 cm2 EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
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nuclear medicine
641gamma=122
5 +/- 1 mm)
Such an alumina tube can be used at operating temperatures of 1700 oC in both oxidizing and reducing atmospheres
Oscillation Fixture
O-ring can be inserted between the lid and jar for wet grinding (ID:90mm
(for sodium-ion battery)
please click the picture for detail:
Please see the following for assembling details
Resistivity: >50 Ohms/cm (If you would like to measure the resistivity accurately
Furnace Features Stainless steel casing design for shielding microwave radiation
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