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SKU:3360433947
Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 2SP,R:>50 ohm.cm - GEUe50D05C2R50US
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 2SP,R:>50 ohm.cm - GEUe50D05C2R50USGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: both sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: < 5E2 cm^2 Package: under 1000 class clean room Typical Properties:
- 40PSI (0
(The 380VAC version is available upon request)
Material Requirement 32-75 Microns
Cu coated Si Wafer ( 10x5 mm size )
CR2016 coin cell case for
5mm Depth (See Fig
180-200C for upper blade
Such a gas diffusion layer is engineered to have state-of-the-art performance over a wide range of operating conditions and it can serve as catalyst support for organic electrochemistry
Demo Video How to make cylindrical cell
Bi-crystal Cu Cu Au Ag Al Ni
Nanopowder
please see related product below
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Exchange/Return Notes
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- Final sale items are not eligible for returns or exchanges.
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