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SKU:80329881793
Ge Wafer Undoped (110) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Wafer Undoped (110) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cmGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other
Symbol Al
Color varies (black
NRTL / CSA certification is available upon request at the extra cost
Surface finish( RMS or Ra): <5 A
GaN layer thickness 20 microns
Size: 100mm dia x 0
Surface roughness: < 8 A ( by AFM)
Application Notes You may use the liquid rubber to seal the sample to be CIP ( click Pic
Resistivity: 58~72 ohm/sq
A plastic protection cover is included
improperly usage the EQ-PCG-2V-LD with turbo-pump may permanently damage pump-vane
Thermal conductivity: 270 mW / cm
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