SKU:47380659066
GaAs Wafer - Growing Method: VGF (100) P type Zn doped , 3"x0.625 mm, 1sp
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaAs Wafer - Growing Method: VGF (100) P type Zn doped , 3"x0.625 mm, 1spGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 3" dia x 0. 625 mm Polishing: one side polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (0. 74 3. 60) x 10^19 cm^3 Mobility: 59 88 cm^2 V. S EPD: < 5000 cm^2 resistivity: (2. 92 9. 70)x10^ 3 ohm. cm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
the minimum range of pressure control recorded by using the system shown in below is:
Mohn hardness
Specifications of the Substrate
Ra(Average Roughness) : < 0
Maintenance Notes
(please set the oven to 30C
WIFI Option
Click the picture below to see the finished polymer Li-Ion battery made by the heated sealer
and area desnity for double side is 27 mg/cm2
Data Sampling
Core wire diameter 0
Si wafer Orientation: (100) + / - 0
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