50 ohm.cm" loading="eager" fetchpriority="high" decoding="async"/>
SKU:33662685751
Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm
Free Shipping on orders over $50
Shipping Estimate
USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: two sides polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5.
The pressing die cannot be used for pressing powder with particle size < 30 microns
you can use W10-30 motor oil as a coolant
Resistivity: (2
5 mm thickness Net Weight 6
Conductive carbon-coated copper foil can replace conventional Al foil as a better anode substrate with improved properties
Operation The package must be open inside a glove box with Argon Gas and moisture less than 2%RH
15" OD larger diameter Alumina tube is made of high purity 95% Al2O3 material
Surface Resistivity (ohms/sq
Wafer Size: 10x5 x0
Material Case: SS316
A 110 - 220V AC (50/60 Hz) to 24VDC NRTL certified power adapter is included
Polished surface: substrate surface is EPI polished via a special CMP procedure with Ra < 5 A
Easy Shipping
Quick Dispatch:
Your Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm orders ship within 1-2 business days.
Delivery Options:
- Standard: 3-7 business days
- Fast: 2-3 business days
- Express: 1-2 business days
Order Tracking:
You'll receive a tracking link by email once your Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm ships.
Need Help?
Questions about Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm, sizing, or delivery? We're just an email away.
Live Shipping Estimates:
Enter your location at checkout to see available shipping methods and costs for Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm in your area.
Get Shipping Estimates
Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
- To process your return/exchange, please contact us at [email protected]
- Please click here for more details>>> Return & Exchange Policy
You may also like
GaAs Wafer , Growing Method: VGF ,(100) undoped Semi-Insulated 100mm D x0.6 mm, 1SP
217.93
★★★★☆4.8 (126)
GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5
229.43
★★★★★4.9 (98)
Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 0.1-0.5ohm.cm
181.67
★★★★★5.0 (157)
Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 1-5 ohm.cm
181.67
★★★★★4.7 (84)
GaAs VGF Grown(110) orientation, un-doped, Semi-Insulating, 3" dia x 0.5mm, 1sp
189.18
★★★★★4.9 (203)
Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 0.1-1.0 ohm.cm - GESbe50D05C1R01US
158.67
★★★★★5.0 (176)
GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5
263.93
★★★★★4.8 (132)