SKU:33662685751

Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm

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Regular price $136.85 USD
Regular price $175.85 USD Sale price $136.85 USD
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: two sides polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5.

The pressing die cannot be used for pressing powder with particle size < 30 microns

you can use W10-30 motor oil as a coolant

Resistivity:                    (2

5 mm thickness Net Weight  6

Conductive carbon-coated copper foil can replace conventional Al foil as a better anode substrate with improved properties

Operation The package must be open inside a glove box with Argon Gas and moisture less than 2%RH

15" OD larger diameter Alumina tube is made of high purity 95% Al2O3 material

Surface Resistivity (ohms/sq

Wafer Size:                    10x5 x0

Material Case: SS316

A 110 - 220V AC (50/60 Hz) to 24VDC NRTL certified power adapter is included

Polished surface: substrate surface is EPI polished via a special CMP procedure with Ra < 5 A

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Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
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