SKU:99400790354
Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 0.1-0.5ohm.cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 0.1-0.5ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg Wafer Size: 2" dia x 500 microns Surface finish (RMS or Ra) : Two sides optical polished < 30A Doping: Sb doped Conductor type: N type Resistivity: 0. 1 0. 5ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A
please inform us
mm) is included for the placement of analysis equipment and tools
45mm(+/_ 0
9665569 g/mol
Pack: Packed in 100 grade plastic bag under 1000 class clean room
5nm(by AFM)
SYJ-150 is a low-speed diamond saw
Mat Surface (Treatment Layer)
Measurement cycles
Material: Copper Foam
5V) due to the passivation of cladding by electrolyte component (especially LiPF6 based electrolyte system) to form a layer of AlF3
Ion Plating
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