SKU:11683771941
GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5GaAs single crystal wafer Growing Method: VGF Orientation: (100)+ 0. 5 degree Size: 3" dia x 0. 625mm Polishing: two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration: (1. 06 3. 96) x 10^18 cm^3 Mobility: 1420 2480 cm^2 V. S Resistivity: (1. 1 2. 38) E 3 ohm. cm EPD: <1000cm^2 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Other Sapphire
Specifiations:
005 V - 2 V Material Safety Data Sheet
To avoid the risk of accidents and damage to the Pressing Die
Maintenance Notes
Pocket Size(mil): L105*W110*D28 Pocket Size(mm): L2
Fitting Ports
area) Package one 1000 class clean room with 100 class plastic bag Features:
Polishing: Two sides polished
Bow: <= 20um
distribution
Soft rubber splash guard ring for safe operation
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