GaAs, Growing Method: VGF ,(111)B , Zn-doped, P-type, 2" dia x 0.4 mm, 2sp

GaAs, Growing Method: VGF ,(111)B , Zn-doped, P-type, 2" dia x 0.4 mm, 2spGaAs single crystal wafer Growing Method: VGF Orientation: (111)B Size: 2" dia x 0. 4 mm Polishing: two sides polished Doping: Zn doped Conductor type: S C P Resistivity: (7. 49 8. 12)E 2 ohm. cm Carrier Concentration: (3. 70 4. 01)E17cm^ 3 Mobility: (208 209) cm^2 V. S Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Vacuum gauge and valves Two vacuum flanges are included for the glove box to achieve vacuum to remove moisture and oxygen without expensive inert gas purging

5Mpa to ensure no explosion from the can)

Purity:              > 99

5% Specific Capacity 110 mAh/g Coating Double sided Double Side Density 430-440 g/m^2 SDS  Material Safety Data Sheet Application Note Viddeo:

10 pieces of Kapton film

Pocket Size (mm):   L5

It is widely used as X-ray and gama-ray detectors

Flow Cell Diagram        Photo Credit: Rahman

45mm) with a tolerance +/- 0

The maximum pumping rate of 25 mL/hr with a 60 mL syringe

Diameter: 100mm  +/- 0

Compliance  CE Certified Warranty One year limited with lifetime support