SKU:82024235159
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SPGaAs single crystal wafer Growing Method: VGF Orientation: (100) Flat: (01 1) .(011) Size: 100mm dia x 0. 6mm Polishing: two sides polished Ra(Average Roughness) : < 0. 4 nm Doping: undoped Conductor type: Semi Insulating Resistivity: (1. 41 4. 4)E8 Ohm. cm Mobility: 3240 6000 cm2 v. s. EPD: <5000 cm2 EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Mobility:200-500 cm^2/V
DIY example
Note: EPI polishing
50 g/pcs Note
Size: 0
Size: 10 x 10 x 0
consisting of equal numbers of boron and nitrogen atoms
PrimPrimary Flat: EJ(0-1-1)+-1 degree
New innovation
8)x10^18 cm^-3
The microwave furnace is good for rapid heating at a short time of less than 10 minutes
Net weight: 5
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