SKU:68752175178
GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1sp
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1spGaP single crystal wafer, Size: 2" diameter(0. 15mm) x 0. 45mm(0. 05mm), Doping: S doped, Conducting type: N type, Orientation: (111)30' Edge Orientation: (110)1 Polished: One side polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 ? FONT> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100>
With this testing kit
87 nm and < 10 nm
Typical Properties for Al2O3:
220V Single Phase
Particle Distribution
digital speed display as well as complete accessories
Various thicknesses
100 pairs of CR2032 button cell cases
0mm Electrical Insulating Good Hot Sealing Condition 180-190°C Moisture Vapor / O2 Transmission Rate 200ppm / 5 years Laminate Strength Nylon/Al more than 2N/15mm Al/CPP more than 5N/15mm Heat Seal Strength More than 22
Three pcs total 6" cutting blades are included for cutting various materials:
Growing Method: VGF
Construction Material
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