SKU:68752175178

GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1sp

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Regular price $327.18 USD
Regular price $368.18 USD Sale price $327.18 USD
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1spGaP single crystal wafer, Size: 2" diameter(0. 15mm) x 0. 45mm(0. 05mm), Doping: S doped, Conducting type: N type, Orientation: (111)30' Edge Orientation: (110)1 Polished: One side polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 ? FONT> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100>

With this testing kit

87 nm and  < 10 nm

Typical Properties for Al2O3:

220V Single Phase

Particle Distribution

digital speed display as well as complete accessories

Various thicknesses

100 pairs of CR2032 button cell cases

0mm Electrical Insulating Good Hot Sealing Condition 180-190°C Moisture Vapor / O2 Transmission Rate 200ppm / 5 years  Laminate Strength Nylon/Al      more than 2N/15mm Al/CPP       more than 5N/15mm Heat Seal Strength More than 22

Three pcs total 6" cutting blades are included for cutting various materials:

Growing Method:                VGF

Construction Material

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