SKU:99201539224
GaN ,N-type ,Si doped (0001) 10x10.5x0.35mm,1sp- Ga-face polished
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- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaN ,N-type ,Si doped (0001) 10x10.5x0.35mm,1sp- Ga-face polishedGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of the Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Bow
For preparing Li-ion battery electrode material and conducting material
4 half rings installed with heating elements
D tube fitting
Water-reactive solid
8 alligator clips with cable for universal connecting (especially for pouch cell
100 pcs/bag
One piece of 50160 aluminum case
Case ID: 49
Doping: Sb doped
Click the picture above to view the cases before coating and after coating
Warnings Do not overflush the water bowl/base with any kind of liquid
D 1-2/3" +/- 0
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