SKU:13274738046
GaAs, VGF Grown (110) ori. N type, Si-doped, 5 x 5 x 0.3 mm, 2sp
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaAs, VGF Grown (110) ori. N type, Si-doped, 5 x 5 x 0.3 mm, 2spGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 5 x 5 x 0. 35 mm Polishing: Two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration: (2. 4 3. 27)x10E18 cm^3 Mobility: 1630 1870 cm^2 V. S Resistivity :( 1. 17 1. 4)x10^ 3 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Tungsten (W)
C-plane orientation
GaN layer thickness 20 microns
Application: Connect to anode current collector as polymer battery negative terminal
Conductive Graphite is used as conductive material when preparing Li-ion battery Cathode and Anode
The following literature can be used as reference:
TTV: <= 25um
The case and spring shown in the picture are not included
Packing: In vacuum bag
Type/Dopant: N type
EQ-OTF-1200X-80-III
Rocker base: 110 L x 350W x 320 H(Max)
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