GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film: 5um

GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film: 5umGaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate Specifications Size : 5mmx5mm Substrate Sapphire, Orientation C (0001) + 1. 0 o Conduction Type: n type, Resistivity < 0. 5 Ohm cm Front Surface Finish (Ga Face) As grown Back Surface

tip-collector distance

Conductor type:              N-type

Remembers previous settings on power-up

OVERALL TRAY SIZE Size        = 50

Precision temperature control with 30 segments programable

After refilling the glove box with high purity Argon gas (5N purity)

Density (g/cm3)

Ball mill and sieve the powder and apply only the 32~75 mircrons powder to the pressing die to avoid the damages

One stainless steel sleeve is in outside to protect the die from cracking

1mm Weight 2

100 pcs Coin cell cases (MTI's CR2032 cases) are included in the package for testing and immediate use

long equipment life