GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.3 mm , 2SP

GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.3 mm , 2SPGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: c axis (0001) + 1. 0 o Type: N type(undoped) Nominal Thickness 300+ 25 microns Dimension: 10 mm x 10. 5 mm

Viscosity: 1% aqueous solution

Suggested Sealing Method: (parameter below may vary from case to case)

Digital control panel

CIP30-E300 is CIP or WIP Die for solid-state battery research

Mobility:                           4700-5630cm^2/v

( Ultralsonic processor )                    ( Vacuum box )

9") 1 LSS007 One Pair of Blade Clams

4) x 10^16 /cm^3

Resistivity:               >1000 ohm-cm  (If you would like to measure the resistivity accurately

94mm Flatness =   0

Limit:                            70 centigrade

of outer nozzle: 15G (1