![GaP wafer, N type, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm in dia x 0.25 mm, 1sp](https://cdn.shopify.com/s/files/1/0533/5600/3482/files/gpua50d05c2-9_752b1da9-49a6-491a-a05e-6816f7699f42.jpg?v=1736897640)
SKU:70550474062
GaP wafer, N type, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm in dia x 0.25 mm, 1sp
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaP wafer, N type, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm in dia x 0.25 mm, 1spGaP single crystal wafer, Size: 48 mm in diameter x 0. 25mm, Doping: S doped Conducting type: N type, Orientation: (100) 2 degree OFF toward [101] + 0. 5 deg Polished: one side Surface finish (RMS or Ra) : < 8A Carrier Concentration: (0. 25 ~ 2. 0 ) E18 cm^3 Risistivities: 0. 185 ohm cm Typical Physical Properties Crystal Structure Cubic. a =5. 4505 ? FONT> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC
In course of CVD fabrication of graphene hydrogen and methane gases are introduced into a furnace that heats to 1000° Celsius
SiC blade is very brittle
1 Mpa = 10 Kg/cm2
(Voltage-time curve
Mobility: 184-200cm^2/V
Surface finish (RMS or Ra) : < 5A
Resistivity < 0
Mcdanel strongly recommends keeping ramp rate less than 100oC/ hour at 400 - 1700 oC range
8 mm thick permanent magnetic sheet with PSA backing
Density: 5
Carrier concentration: (5
Diameter: 50
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