SKU:91582192064
Si Wafer (111) 2" dia x 0.5 mm, 2SP, N type, As doped ,R:0.005-0.05 ohm.cm - SIAsc50D05C2R0005
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Ships within 48 hours · Estimated delivery Jul 15 - Jul 20
Description
Si Wafer (111) 2" dia x 0.5 mm, 2SP, N type, As doped ,R:0.005-0.05 ohm.cm - SIAsc50D05C2R0005Single crystal Silicon Conductive type: N type As doped Resistivity: 0. 005 0. 05 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 5 + 0. 025 mm Orientation: (111) + 1o Polish: two sides polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma
Size: 2" diameter x 0
high performance
Crushing and Grinding calcined powder again by mortar or ball mill
are programmable
GaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE)-based method
InP single crystal wafer
Other InSb
10 cutting dies are included for immediate use
A universal power adapter for 100-240 VAC input voltage is included
MSK-SFM-HT16 is a high throughput mixing and milling machine that has 16 tube positions with 50 ml capacity
Polish: Two side EPI -ready polished
Operation Video
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