SKU:665871840

Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm

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Regular price $100.80 USD
Regular price $144.80 USD Sale price $100.80 USD
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Ships within 48 hours · Estimated delivery Jul 15 - Jul 20

Description

Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cmSingle Crystal: Si Growth Method: FZ (Floating Zone) Type Dopant: N Phosphorus Orientation: (111) Resistivity: 15,000 25,000 ohm cm Diameter: 100 mm + 0. 5 mm Thickness: 0. 3 mm + 0. 025 mm Primary Flat: <110> Polish: One side polished Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

ea = 2400

Turn on the water outlet when flushing the water bowl/base to avoid liquid overflowing during the operation

Polish:  Two sides EPI polished by CMP technology with minimum sub-surface damage

working temperature 1750 oC Warning Please don't use alumina tube under vacuum at temperature > 1500 oC when vertically-mounted and >1400 oC when horizontally-mounted

The first range: 5

a separator should be placed between the two shanks of the heating element before hanging the element inside the furnace chamber

If the density of deposited material is known

67mm Height     = 3

Used to Indicate & Manually control Air or Gas flow

Click here to order a complete set

Heating Element for YLJ-HP88V

Crystal purity:  >99

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