SKU:665871840
Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm
Free Shipping on orders over $50
Shipping Estimate
USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 15 - Jul 20
Description
Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cmSingle Crystal: Si Growth Method: FZ (Floating Zone) Type Dopant: N Phosphorus Orientation: (111) Resistivity: 15,000 25,000 ohm cm Diameter: 100 mm + 0. 5 mm Thickness: 0. 3 mm + 0. 025 mm Primary Flat: <110> Polish: One side polished Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
ea = 2400
Turn on the water outlet when flushing the water bowl/base to avoid liquid overflowing during the operation
Polish: Two sides EPI polished by CMP technology with minimum sub-surface damage
working temperature 1750 oC Warning Please don't use alumina tube under vacuum at temperature > 1500 oC when vertically-mounted and >1400 oC when horizontally-mounted
The first range: 5
a separator should be placed between the two shanks of the heating element before hanging the element inside the furnace chamber
If the density of deposited material is known
67mm Height = 3
Used to Indicate & Manually control Air or Gas flow
Click here to order a complete set
Heating Element for YLJ-HP88V
Crystal purity: >99
Easy Shipping
Quick Dispatch:
Your Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm orders ship within 1-2 business days.
Delivery Options:
- Standard: 3-7 business days
- Fast: 2-3 business days
- Express: 1-2 business days
Order Tracking:
You'll receive a tracking link by email once your Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm ships.
Need Help?
Questions about Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm, sizing, or delivery? We're just an email away.
Live Shipping Estimates:
Enter your location at checkout to see available shipping methods and costs for Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm in your area.
Get Shipping Estimates
Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
- To process your return/exchange, please contact us at [email protected]
- Please click here for more details>>> Return & Exchange Policy
You may also like
Si Wafer (111) with 10 degree miscut towards <112><110>, 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) - SiUc101d05C1deg10R1000
107.56
★★★★☆4.8 (10)
Si Wafer (100) 2" dia x 1.0 mm, 2SP, FZ , Undoped, resistivities: > 10,000 ohm-cm
142.06
★★★★★4.9 (13)
Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 1-10 ohm-cm
93.35
★★★★★5.0 (7)
Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities: 0.1 - 1.0 ohm-cm
54.05
★★★★★4.7 (7)
SiC - 4H (0001), 2" dia. x0.33 mm th., two sides polished - SC4Hz50D033C2US
675.79
★★★★★4.9 (11)
Si wafer (100), 3 "dia x0.5 mm, 1sp, N type, P-doped, R:1-10 ohm.cm - SIPa76D05C1R1
60.81
★★★★★5.0 (6)
Si Wafer (100), 4 " dia x 0.2 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm
108.16
★★★★★4.8 (22)