SKU:31583827533
SiC - 4H (0001), 2" dia. x0.33 mm th., two sides polished - SC4Hz50D033C2US
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Ships within 48 hours · Estimated delivery Jul 15 - Jul 20
Description
SiC - 4H (0001), 2" dia. x0.33 mm th., two sides polished - SC4Hz50D033C2USSpecifications of Substrate Orientation: <0001> 30? Edge Orientation : <11 20>1<10 10>1 Dimension: 2"+ 0. 15mm x 0. 33 + 0. 05mm Polished: two sides polished Surface Roughness: < 5 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 53 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing: Silicon face EPI polished Band Gap: 3. 26eV ( Indirect) Conductivity type:
Nominal ITO film thickness:150 (+/10%) nm
Digital LCD control panel for setting all parameters
We suggest cutting the sample along with the included dressing stone (Glue sample and the dressing stone side by side and cut them together
Ni Single crystal substrate
Mount Vise: Double T clamp vises are included for quick tightening or release
Parts should not be placed directly onto the inside surface of a hot furnace tube increase thermal shock
Polish: Two sided EPI polished by CMP tecnology with less sub-surface lattice damage
Check this link to understand liquid rubber for sample preparation
MTI can arrange NRTL to perform UL/CSA inspection and label the machine per customer's request
01 mm) Weight 15 Lbs
Prime Grade: with FWHM 20 arc second
D quartz tube with a built-in 2-inch adapter on each end
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Your SiC - 4H (0001), 2" dia. x0.33 mm th., two sides polished - SC4Hz50D033C2US orders ship within 1-2 business days.
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- Fast: 2-3 business days
- Express: 1-2 business days
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
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