SKU:86029681085
Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 1-10 ohm-cm
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Ships within 48 hours · Estimated delivery Jul 15 - Jul 20
Description
Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 1-10 ohm-cmSilicon Single crystal wafer (111) orientation 6" Diameter x 0. 65 0. 7 mm P type, boron doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) One side polished Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
Thickness: 0
0 First Cycle Efficiency %
Resistivity: 10E3 ~ 10E4 ohm-cm
The KF50 rotatable flange had a wide range of adaptability to vacuum chambers and tube flanges
Size: 4" diameter x 0
core die made of hardened steel and highly polished with hardness HRC 60 - 62
Material: 45# steel with Cr plated (all shinning parts) for anti-crossing
Alloy electrode crystals are recommended for high-stress deposition
Crystal growth method: Top seed flux growth
You may click the picture left (Pic
From 09/07/2022
9E4 /cm^2/V
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