SKU:91230455002
InAs (111)A, P Type, Zn doped 2" dia x 0.45 mm, one side polished
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
InAs (111)A, P Type, Zn doped 2" dia x 0.45 mm, one side polished2" InAs wafer (P type) 2" InAs wafer P Type, Zn doped Size: 2" dia x 450 micron + 20 microns Orientation: <111>A Polishing: one side polishd Resistivities: 5. 1x10^ 2 ohm cm Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (111) A Orientation Flat SEMI Doping Zn doped Conductivity type P type Carrier Concentration 6. 4E17 cm3 Mobility 192 cm2 V. S Resistivity 5. 1x10^ 2 Ohm Cm EPD 1. 9E4 cm 2 Related
Electrode Material Gold
Non- effective area: 2
Mobility 100-500 cm2/V
Oxide Layer: 1 micron
3 right to order
Video by MTI showing the Flow Cell in operation
Orientation (100)
Testing conditions: 0
Digital Low Speed Diamond Saw with 4" Cutting Blades - SYJ150
ID: 213 mm
For anti-corrosion and high-temperature lubricant
Gauge Displayed Pressure Value (Bar) for 87 mm Dia
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