InSb (111)- A 2" dia x 0.5 mm, Te-doped, N type, 1 side polished

InSb (111)- A 2" dia x 0.5 mm, Te-doped, N type, 1 side polished2" InSb wafer (N type, Te doped) Size: 2" dia x 0. 5mm thick with thickness tolerance + 25 um Orientation <111>A + 0. 5o with two reference flats Polishing: one side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method CZ Orientation (111) A + 0. 5o Orientation Flat <0 1 1> .<0 11> Doping Te doped Conductivity type N type Resistivity: (1. 1 3. 3) E 4 ohm. cm Carrier

Warranty Pressing Dies are consumable products and are not covered by MTI's warranty

Structure A Flange for 60mm O

Resistivity: (7

7mm (ID) x 73

This is very useful where multiple products are processed using the same controller but require different parameters to be set

Density:                                                              7

You may choose the device below to monitor gas humidity and oxygen content inside the glove box

Conductivity type                                   N type

Carrier Concentration: N/A

Bismuth telluride crystal substrate is highly oriented crystal ( not single crystal )

2 degree miscut toward M-plane

Front Surface Finish          (Ga Face)