SKU:29048657110
InSb (100) 2" dia x 0.5 mm, N type Undoped, 2 sides polished
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- USA
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
InSb (100) 2" dia x 0.5 mm, N type Undoped, 2 sides polished2" InSb wafer (N type, Undoped ) Size: 2" dia x 0. 5 (+ 0. 025 ) mm thick Orientation: <100> + 0. 5 o Type dopant: N type Undoped Surface Polishing : In(A) face polished chemical ,final face Sb(B) face polished Linde A0. 3um ( mirror finish) Mobility: > 3. 9E4 cm^2 V. S EPD: < 200 Carrier Concentration: (2 7)E14 cm 3@77K Growth Method: LEC Packing: Sealed in nitrogen in single wafer container at 100 class clean room
Electrode Material Gold
Cutting Blade Come with 5 pcs of the impregnated diamond blade of 4" Dia × 0
Thickness 58 um
Click the video above to see the battery cathode coated by MTI's Film coater MSK-AFA-II-VC
about 90 % usable area
Noise level < 55 dB
Optional Parts
Multiple operating modes: Infuse only
This 4" tube flange is specially made for CVD applications where customers need a dual tube configuration
Edge Chamfering: Ground with 45 degree chamfering
SiC blade provides better cut-off rate and much lower cost for all sample cutting
60 W Maximum
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