SKU:47570504893
InSb (100) 5x5x 0.5mm, Undoped, N type, 2 sides polished
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- USA
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- USA
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
InSb (100) 5x5x 0.5mm, Undoped, N type, 2 sides polishedInSb substrate (N type, undoped) 2sp Size: 5x5 x 0. 5 mm Orientation <100> + 0. 5o Polishing: both sides epi polished Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5o Doping Undoped Conductivity type N type Carrier Concentration (2 7)E14 @77K Mobility 4E4 cm2 Vs EPD <300 cm 2
Adhesive Polymer Tape on the tab allows for immediate hot sealing
Options Please click the picture to find other size Coin cell and Crimper
Mix contents thoroughly prior to use
Sapphire (single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films
125" Thick bond to Copper(Cu) backing plate(0
5" x 4 " KF/NW25 Flange KF/NW25 Flange 25 cfm
Macro Defect Density <=2 cm-2
An extension power cord with a feedthrough is included in the standard package
Continuous current: 40A Max
*r_(Crosection area of the working piece)^2 )
Dimension: 1" x 3" x 3
808P series
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