SKU:84934838602
SiC - 4H on axis <0001>+/- 0.5 degree 4" dia. x0.35 mm thick. Semi-Insulating two sides polished (Si side EPI- polished)-1
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Ships within 48 hours · Estimated delivery Jul 15 - Jul 20
Description
SiC - 4H on axis <0001>+/- 0.5 degree 4" dia. x0.35 mm thick. Semi-Insulating two sides polished (Si side EPI- polished)-1Specifications of Substrate Orientation: on axis <0001>+ 0. 5 degree Dimension: 4"( + 0. 015'')Dx0. 35mm( + 25um) Polished: two sides epi polished Surface Roughness: < 10 A by AFM Please click here to identify the Si face from C of this double side polished wafers Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 53 A Stacking sequence: ABCB (4H) Orientation: (0001) Polishing :
The user can easily compare the performance of the batteries tested in channels both visually and statistically
Color: colorless
8 Gold Plated spring load holders with adjustable height for measuring cylinder or coin cell up to 70mm(H) (pls click a picture below 1-2 to enlarge)
The KF50 rotatable flange had a wide range of adaptability to vacuum chambers and tube flanges
1 ohm-cm
failure analysis
EPD: <500 /cm
MTI does not recommend or endorse the use of any toxic
Tensile strength
Orientation: (010) +/-1
Our high quality rutile single crystal boule and polished components have been widely used for optical isolators and special prisms
Dimension: Diameter 3mm
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Exchange/Return Notes
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