SKU:27641084185
SiC - 4H (0001)with 4 degree of toward <11-20> /<10-10>, 10x10x0.33 mm , Si Face, 1SP - SC4HZ1010033S1Deg4
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
SiC - 4H (0001)with 4 degree of toward <11-20> /<10-10>, 10x10x0.33 mm , Si Face, 1SP - SC4HZ1010033S1Deg4Specifications of Substrate Orientation: <0001> with 4 degree off toward <11 20> Dimension: 10 x 10 x 0. 33 + 0. 03 mm Polished: One sides epi polished on Si face Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 05 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26 eV ( Indirect) Conductivity
0% in weight (for customer's reference) of the mixing powder (active+conductive+binder)
Primary Flat Length: 17 +/- 1 mm
Conductor type: Semi-Insulating
The temperature controller is optional
Pressure Vessel
• Polishing: Two sides polished (60/40)
Pocket Size(mm): L1
Polished: two sides polished
One 32-position adapter
00102 cm Flexural Strength 8400 psi 57
Mat Surface (Treatment Layer)
The substrate of Aluminum Foil
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