SKU:27641084185

SiC - 4H (0001)with 4 degree of toward <11-20> /<10-10>, 10x10x0.33 mm , Si Face, 1SP - SC4HZ1010033S1Deg4

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Regular price $146.12 USD
Regular price $195.12 USD Sale price $146.12 USD
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21

Description

SiC - 4H (0001)with 4 degree of toward <11-20> /<10-10>, 10x10x0.33 mm , Si Face, 1SP - SC4HZ1010033S1Deg4Specifications of Substrate Orientation: <0001> with 4 degree off toward <11 20> Dimension: 10 x 10 x 0. 33 + 0. 03 mm Polished: One sides epi polished on Si face Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 05 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26 eV ( Indirect) Conductivity

0% in weight (for customer's reference) of the mixing powder (active+conductive+binder)

Primary Flat Length:      17 +/- 1 mm

Conductor type:             Semi-Insulating

The temperature controller is optional

Pressure Vessel

• Polishing: Two sides polished (60/40)

Pocket Size(mm):   L1

Polished:         two sides polished

One 32-position adapter

00102   cm   Flexural Strength 8400   psi 57

Mat Surface (Treatment Layer)

The substrate of Aluminum Foil

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Exchange/Return Notes
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