Si Wafer (111), 2" dia x 0.3 mm, 1SP, N type, As- doped, R<=0.005 ohm-cm

Si Wafer (111), 2" dia x 0.3 mm, 1SP, N type, As- doped, R<=0.005 ohm-cmSingle crystal Silicon Conductive type: N type As doped Resistivity: <=0. 005 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 3 + 0. 025 mm Orientation: (111) + 1o Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner

41 mm) Length 1000 mm (40"") Max

most chemicals and solvents

Rutile ( TiO2) single crystal is one of the most suitable materials for spectral prisms and polarizing devices such as optical isolators and beam displacers because it has a large birefringence with a high refractive index

Extensibility: Lengthwise

Pressing die sleeve: 30mm O

10 15 20 25 30 35 40 45 Actual Force Applied to the Hydraulic Cylinder (Ton) 3 6 9 11 14 17 19 22 24 Displayed pressure value to actual applied force conversion: 1 MPa = ~ 0

Quartz Crystal signal cable to the feedthrough

50/60 Hz                                                                                                        Power consumption 120W  Ultimate pressure with gas ballast

Molybdenum sulfide (MoS2):

Orientation: (100) +/- 0

without destroying the internals of the cell in order to study the materials inside

12mm and 19mm)