SKU:78364824392
SiO2+Pt thin film on Si (B-doped)substrate ,10x10x0.5mm,1sp (SiO2=500nm, Pt=60nm)
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
SiO2+Pt thin film on Si (B-doped)substrate ,10x10x0.5mm,1sp (SiO2=500nm, Pt=60nm)Silicon Wafer Specifications: Conductive type: SiO2+Pt thin film on Si (B doped, (100)Ori.) substrate ,10x10x0. 5mm,1sp( SiO2=500nm,Pt=60nm) Resistivity: <0. 005 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 10x10 x 0. 5 mm Polish: one side polished Surface roughness: < 5A Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing
Size: 20x20x0
Crushing and Grinding calcined powder again by mortar or ball mill
Polish: One side polish
BST8-12 is an eight-channel battery and supercapacitor analyzer to analyze all kinds of batteries and supercapacitors from 5
Na3Zr2Si2PO12 Solid-State Electrolyte for Sodium-Ion Battery - SIB-NZSPO
You can choose the various end of Fitting as options ( click here to order separately )
Orientation: (100) +/- 0
D (or Ø50mm x 50mm)
Do not use this die set for pressing powder with a particle size of 30 microns or smaller
Conducting type: N-type
Supports J
four high-temperature silicone O-rings (300oC Max
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