SKU:87867523630
SiC - 4H (0001), 5x5x0.33 mm , two sides polished
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- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
SiC - 4H (0001), 5x5x0.33 mm , two sides polishedSpecifications of Substrate Orientation: <0001> + 0. 5 Dimension: 5x5 x 0. 33 + 0. 03 mm Polished: Two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 05 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26 eV ( Indirect) Conductivity type: N TTV Bow Warp: <=35um Micropipe
Case Height: 100mm
Packing: under 100 class clean room with vacummed bag
Polish: Fine ground
MTI supplies high quality hot pressed Alumina cutting blades with 4" diameter x 0
which is not covered by a warranty
Options Optional safety protection: Positive Temperature Coefficient (PTC) Thermistor is built into the cap by request
Macro Defect Density <=2 cm-2
Orientation: (100)
Application Solid-State Electrolyte for Sodium-Ion Battery
5 mm for each side
Identification number: UN1340
1 1/2" deep
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