SKU:59386671851
Si Wafer (100), 4 " dia x 0.525 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Si Wafer (100), 4 " dia x 0.525 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cmSingle crystal Si, (CZ) Conductivity: N type ( As doped) Resistivity: 0. 001 0. 005 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" in diameter x 0. 525 mm Orientation: <100 > + 0. 5 deg Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal
Epitaxial thin Film Composition <110> CeO2
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Different types of curves can be created by software based on user definition
mm 2 /m when the surface of its heat-generating part reaches 1050 oC while being heated in air
Package: under 1000 class clean room
APS: 20 - 100 nm
EPD <10000 / cm 2
ideal for clean wafer / substrate surface
One KF-25 connector is installed on the back for connecting the humidity monitor or other testing equipment
kt (thickness mode) 59-62%
Y2O3 stabilized ZrO2
Purity: 99
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