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SKU:81696622796
Si Single Crystal Substrate, Undoped (100), 2"diax 1.0mm 1sp, R>10000 ohm.cm - SiUa50D10C1R10000
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Si Single Crystal Substrate, Undoped (100), 2"diax 1.0mm 1sp, R>10000 ohm.cm - SiUa50D10C1R10000Single crystal Si Conductive type: Undoped Resistivity: > 1000 ohm cm Size: 2" diameter x 0. 5 mm Orientation: (100) Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
Wafer size: 0
Weight Capacitance (F/g x AC)
Professional-grade blades with the continuous rim are designed for lapidary materials
L=L1+L2:=220+280=500mm
Impurities Na (ppm)
MTI supplies high quality sintered diamond blades for precision cutting or dicing of various oxide crystals
Orientation: (111)
5" Arbor Abrasive Al2O3 Blade for Cutting Ferrous Metals 1 LSS021 Dressing Stone for Sharping and Reactivating Diamond blade 1 LSS022 Protective Plexi-glass shield 1
A set of 20mm Silicon Nitride Pellet Pressing Die - Die-SiN
The cost is much lower than sintered diamond saw
Selectable infusion rates units: mL/hr
This is the right side of smart sealing assembly for 3" vacuum tube furnace to seal 76 +/- 1
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Exchange/Return Notes
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- Final sale items are not eligible for returns or exchanges.
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