SKU:44504500112
Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 1-10 ohm-cm
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 1-10 ohm-cmSingle crystal Si, Prime Grade Conductivity: P type ( B doped) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 525 (+ 0. 025) mm Orientation: (100) + 0. 5 deg Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner
sapphire wafer is being used extensively as a substrate for III-V nitrides and magnetic epitaxial films due to its better lattice mismatch
4247 2
Operating Temperature 1200ºC Application Notes Vacuum pressures may only be safely used up to 1000°C
and twins If your application is susceptible to the defects
Nylon housing
Thermal Expansion: a a= 16
Height of Tape Area: 4
Battery Analyzer
45kVA AC Power Source / Power Conditioner
Polish: two sides optical polished
45 psi - 14
which has high thermal and electrical conductivity
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