SKU:63445831079
Si wafer (110), 3"dia x 0.5 mm, 1sp, N type, P doped, resistivity: 1-10 ohm-cm - SIPe76D05C1R1
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- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 15 - Jul 20
Description
Si wafer (110), 3"dia x 0.5 mm, 1sp, N type, P doped, resistivity: 1-10 ohm-cm - SIPe76D05C1R1Single crystal Si Conductivity: N type ( P doped) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter x 0. 5 mm Orientation: <110> with secondary orientation flat <110> Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single
Mobility: 3710-6230 cm^2/V
The layers are stacked together via van der Waals interactions
Surface Polishing: two sides epi polished
SrTiO3 was grown by vernue ( flame ) method
mso-style-priority:99
535 cycles
Discontinued product
Eight-position microtube rotor is included and comes installed
Mounting Hole Diameter : 4mm / 0
Winding procedure for cylinder cell (Please click on the pictures to enlarge):
Cutting dies are made of carbon steel which is sensitive to moisture
Lithium Storage Options
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