SKU:24905140184
Si Wafer (111) miscut 0+/-0.5 degree, 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities:1-10 ohm-cm
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- USA
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Ships within 48 hours · Estimated delivery Jul 15 - Jul 20
Description
Si Wafer (111) miscut 0+/-0.5 degree, 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities:1-10 ohm-cmSingle crystal Si, Conductivity: P type ( B doped) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 525 mm Orientation: (111) miscut 0+ 0. 5 degree, Polish: One side polished Surface roughness, Ra: < 5A (RMS) Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner
Material: Natural ABS With ESD Coating
the PTFE flange set can be melted if the furnace temperature gets higher than 500°C
Continuous Working Temperature: 1450 oC
Top and bottom insulating spacers are made of nylon
mso-fareast-font-family:"Times New Roman"
Conductor type: N-type
Output: Removal H2O
Dimensions KF40
no agglomeration
The installation can be completed within 10minutes without the use of special tools or welds
NiMH: 1 to 16 cells in series
UL LISTED Power AC Adapter/Charger
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