SKU:51597986961

GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 2sp, (8.62-9.38) x 10^17 /cm^3

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Regular price $183.43 USD
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 2sp, (8.62-9.38) x 10^17 /cm^3GaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 5mm Polishing: two sides polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (8. 62 9. 38) x 10^17 cm^3 Mobility: 168 173 cm^2 V. S EPD: <5000 cm^2 Resistivity: (3. 96 4. 2)x10^ 2 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers

Working Voltage 110VAC

TTV: <= 7um

such as carbon steel

and 24 mm diameter are included in the standard package:

Click the picture below to see the finished polymer Li-Ion battery made by the heated sealer

Polishing:      Two sides   polished

Surface Roughness:   as grown

(Please refer to Pic

ID:     44 mm

Surface Polishing:          two sides optical polished

Growing Method:           VGF

which can inject two types of solutions (liquid or gas) at the same time

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