SKU:26739102435

GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.35 mm , 1SP

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Regular price $200.68 USD
Regular price $237.68 USD Sale price $200.68 USD
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.35 mm , 1SPGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: c axis (0001) + 1. 0 o Type: N type(undoped) Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm

This is fixed thickness precision film applicator with four paths of 5

Application Notes Clean the nozzle and tube after use to prevent clogging

Protection cover

Please use a quartz or alumina crucible to carry the sample

3mm Width Nickel Tab as Negative Terminal for Welding on Cylindrical Cell Electrode

The 1/4" barb fitting for the rubber hose connection allows heating samples in a vacuum or flowing gas

EPD:                                < 500cm^2

SS 304 Milling Balls Combo

50 - 70 % ( max

Elongation Rate (RT):              4

Faraday's measurement and etc

EQ-Die-15D-B is a 14

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Exchange/Return Notes
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