SKU:24870578449

GaSb, (100), Zn- doped,, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration: (5.8)x10^18 cm^-3

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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

GaSb, (100), Zn- doped,, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration: (5.8)x10^18 cm^-3High quality GaSb single crystal wafers for semiconductor industries. Size: 2" diameter x 0. 45mm, Orientation: (100) Dopping: Zn doped, Conducting type: P type. Carrier concentration: (5. 8)x10^18 cm^ 3 Resistivity: 3. 9 x10^ 3 ohm. cm EPD: < 2x 10^3 cm ^ 2 Mobility: 270 cm^2 V. S Polish: one side polished. Grown by a special LEC technique Surface finish (RMS or Ra) : < 5A Typical Properties Crystal Structure: cubic a = 6. 095 Density: 5. 619 g cm3

30mm   Note:

YSZ Ceramic Substrate ( Polycrystaline ceramic of 3

venting hole is on the back

One end is 1/4" BSPP male fitting

Please clean the mould via ethanol after the completion of each experiment

Click the picture below to see how to

Specifications: TYPE:                                      NH20-115*68-28

Melting Point:                  937

( Since August 22

Spare crimping dies ( CR20XX

85 for the CMC with viscosity of 3500-5500 cps

Common applications for the FPTA Traps are processes that generate dusts

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