SKU:35633425094
Si Wafer (100), N type, P doped, 2" dia x 0.3-0.35 mm, 1SP, R:1-10 ohm.cm-1
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Si Wafer (100), N type, P doped, 2" dia x 0.3-0.35 mm, 1SP, R:1-10 ohm.cm-1Single crystal Si Conductive type: N type, P doped, Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 2" diameter x 0. 3 0. 35 mm Orientation: (100) Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw
Orientation <100> +/-0
LiNiCoAlO2 (Lithium Nickel Cobalt Aluminum Oxide) powder for Li-ion power battery cathode 200g/bottle (Ni:Co:Al =8
testing voltage range of 2
Battery Holders
Dimension: 5x5x0
Purity: > 99
250°C (Heating Jacket Capacity)
Standard thickness 500+/- 20 mm
Titanium adhesion layer thickness: 15-20 nm
Polish: EPI polished by CMP technology with less sub-surface lattice damage
Optional sizes available in 10
please order a sintered diamond blade and Lube-150 (please click the 3rd and 4th picture below at an extra cost
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