SKU:86324009157
Si Wafer (111) 2" dia x 0.1 mm, 1SP, P type, B doped, R:1-10 ohm.cm - SIBc50D01C1R1US
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Si Wafer (111) 2" dia x 0.1 mm, 1SP, P type, B doped, R:1-10 ohm.cm - SIBc50D01C1R1USSingle crystal Silicon Conductive type: P type Boron doped Resistivity: 1 10 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 1 + 0. 025 mm Orientation: (111) + 1o Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner
Vacuum Storage Box & Oven
Reference Articles
30 mm Thickness Density
Polishing: one side polished
Temperature Accuracy: ± 0
Click the video below to see the battery anode coated
9 x10-6/ K // c 15
Application Notes Please click here to learn how to use and maintain Alumina tube in MTI high-temperature tube furnace
566 Ultimate tensile strength 150~200MPa Compressive strength 400~520MPa Water absorption 0
75” OD tube of sputtering source through the Quick Connect
Impurity: Impurity REO<0
click pic to see demo video) Vacuum Pump
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