SKU:10105844331
GaN Template on 2" Silicon Wafer, GaN film(500nm), N type, undoped on Si (111) substrates, 2"x 0.279 mm, 1sp
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaN Template on 2" Silicon Wafer, GaN film(500nm), N type, undoped on Si (111) substrates, 2"x 0.279 mm, 1spGaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate. Specifications: Research Grade , about 90 % useful area Nominal GaN thickness: 0. 5? m 0. 1 ? m Front Surface finish (Ga face): <1nm RMS, As grown Back surface finish: as
Flange support parts are included for customers' further customization
Polish: one side polished by CMP
% Yittrium stablized ZrO2)
Sealed by MSK-510
5" Diamond particle grit 250 mesh ( 63 micron)
Ra(Average Roughness) : < 0
For the Data of BOROFLOAT® Borosilicate Float Glass
cmOhms/cm (If you would like to measure the resistivity accurately
006 cal/cm/ oK
Speed 500 to 3
Iodine Absorption Number
Simple to assemble and disassemble Slot Dies
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Exchange/Return Notes
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