GaN Template on Sapphire(11-02) , 5 x 5 mm x 0.5mm ,1sp, GaN film: 5um - FmGaNonALR050505S1FT5um

GaN Template on Sapphire(11-02) , 5 x 5 mm x 0.5mm ,1sp, GaN film: 5um - FmGaNonALR050505S1FT5umGaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate Specifications Sizes 5mmx5mm Substrate Sapphire, Orientation R (00. 1) + 1. 0 o Conduction Type: n type, Resistivity < 0. 5 Ohm cm Front Surface Finish (Ga Face) As grown Back Surface

spark-free light

Composition of Impurities

Wafer size:   3" dia x  0

such as optical coating with dielectric materials and semiconductor processes with high-stress materials

Certify standards include: 1) Induction heater: UL61010-1 & UL499

It will make the furnace movable

05% of reading + 0

Channels and Prismatic Cell Size

Ethylene-Propylene / EPDM: EPDM has outstanding resistance to heat

Various types of samples can be placed in a plurality of vacuum storage tanks and placed directly in the glove box (pic 3 and pic 4)

Reads to 0

Density:                10