SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm

SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mmSpecifications: Film: SiC Epi film with 3C structure grown by PECVD Thickness: 1. 0um + 10% Orientation: 3C SiC (111) Surface: CMP film chemical mechanical polished with Ra < 10 Angstrom Type and dopant: N type, Undoped Surface defects density (microscopic inspection of crystallites or other macro defects) <= 3E3cm^2 TTV 5 29 Bow 9 ~ 3 Silicon substrate: Size: 10x10 x 1. 0 mm thickness Orientation: (111) Type: N type P doped Resistivity: 1 10 ohm. cm

Polish: Single side polished

Air cooling: forced air ventilation

Click the picture below to see the finished polymer Li-Ion battery made by heated sealer

How to mount 100mm dicing blade

-- click pictur to see transmision curve

The SiC blade fit with MTI SYJ-150 low speed saw or other brand of low speed saw

Resistivity:                                          7

Voltage Input AC 110V or AC 220V

Stainless steel flange with double high-temperature silicone O-rings

Wafer Size:                      2" dia x  500 microns

Melting Point:                                      1650 oC

Sizes 5mmx5mm