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SKU:87894952781
Thermal Oxide Wafer: One side 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t,undoped N type, 1SP R:>5000 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 19 - Jul 24
Description
Thermal Oxide Wafer: One side 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t,undoped N type, 1SP R:>5000 ohm.cmThermal oxide Layer Research Grade , about 80 % useful area One side SiO2 layer on 4'' Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type un dped Resistivity: >5000 ohm. cm Size: 4"dia + 0. 5 mm x 0. 5 mm Orientation: (100) + 1o Polish: one side polished Surface roughness, Ra: < 5A (RMS) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer
If CVD gases are considered to be corrosive to stainless steel
An additional tilting setting has been included in the bottom board - it may now be flat or tilted up
} Material: Polypropylene
1 x 10 -6 / k a c= 4
Constant Temperature Zone: 2
Graphite Felt (up to 2200ºC ) for Induction Heating system
The bench-top EQ-FH-36 fume hood provides a working space that minimizes the chance of damages from a hazardous situation
Operating Temperature 0 to 50°C
It is designed to cut metallographic samples faster and safer at an affordable price
Polish: Two sides EPI polished
Dimension 350mm L x 550mm W x 600mm H Net Weight of Machine 55 Kg (121 lbs) Shipping Dimensions 39"(L) x 31"(W) x 35"(H) Shipping Weight 185 lbs Press Dies optional Pressing dies with various diameters are available upon request at extra cost
Primary Flat: <110>
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